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| RB551V-30 Diodes Schottky barrier diode RB551V-30 !Applications High-frequency rectification Switching regulators !External dimensions (Units : mm) CATHODE MARK CATHODE MARK 2.50.2 1.70.1 2.50.2 !Features 1) Small surface mounting type. (UMD2) 2) Ultra low VF. (VF =0.41V Typ. at 0.5A) 3) High reliability. 1.70.1 D 0.30.05 1.250.1 0.7 +0.2 -0.1 0.1 +0.1 -0.05 D 0.30.05 1.250.1 0.7 +0.2 -0.1 0.1 +0.1 -0.05 ROHM : UMD2 EIAJ : SC-76 JEDEC : SOD-323 There are two different markings. !Construction Silicon epitaxial planar !Absolute maximum ratings (Ta = 25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature 60Hz for 1 Symbol VRM VR IO IFSM Tj Tstg Limits 30 20 0.5 2 125 -40~+125 Unit V V A A C C !Electrical characteristics (Ta = 25C) Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. - - - Typ. - - - Max. 0.36 0.47 100 Unit V V A IF = 100mA IF = 500mA VR = 20V Conditions RB551V-30 Diodes !Electrical characteristic curves (Ta = 25C) 10A 100m 10m 1m 125C 1000.0 1A 75C 100.0 Ct (pF) 100m IF (A) IR (A) 125C 100 25C 10 1 -25C 10m 75C 25C -25C 10.0 1m 100 0.0 0.1 0.2 0.3 VF (V) 0.4 0.5 100n 0 1.0 10 20 30 40 0.0 10.0 20.0 30.0 40.0 VR (V) VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics 1.0 Io (A) 0.5 0 25 50 75 Ta (C) 100 125 150 Fig.4 Derating curve |
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